http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8890147-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3c754156d9ab873a2efe5a3990dbf627 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_77d5d6f09319a89e1dae4b3f5a2280b9 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-136213 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1288 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1259 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-13 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1255 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1362 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-13 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 |
| filingDate | 2008-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2014-11-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d59b844d352c93d01ab3d01c5f98f89a |
| publicationDate | 2014-11-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-8890147-B2 |
| titleOfInvention | Pixel, a storage capacitor, and a method for forming the same |
| abstract | A pixel, a storage capacitor, and a method for forming the same. The storage capacitor formed on a substrate comprises a semiconductor layer, a first dielectric layer, a first conductive layer, a second dielectric layer and a second conductive layer. The semiconductor layer is formed on the substrate wherein the semiconductor layer and the substrate are covered by the first dielectric layer. The first conductive layer is formed on a part of the first dielectric layer. The second dielectric layer is formed on the first conductive layer, and the lateral side of the stacking structure including the second dielectric layer and the first conductive layer has a taper shaped. The second conductive layer is formed on a part of the second dielectric layer. |
| priorityDate | 2007-04-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 37.