Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a662c1bca4be2d1bfe792a1ad516c373 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-488 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S977-75 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S977-742 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L51-0566 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08L61-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01B1-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L51-0048 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-221 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-113 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K99-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L51-0036 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-05 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y40-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y30-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B1-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y10-00 |
filingDate |
2011-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2014-11-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e3d03e59aa373bdccb1b17baa1af24fa |
publicationDate |
2014-11-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-8890123-B2 |
titleOfInvention |
Semiconductor composition including a semiconducting polymer |
abstract |
A thin film transistor has a semiconducting layer comprising a polythiophene and carbon nanotubes. The semiconducting layer exhibits high mobility and high current on/off ratio. |
priorityDate |
2011-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |