| abstract |
Provided is a method of manufacturing a semiconductor device of a multilayer wiring structure that comprises a CF x film as an interlayer insulating film, that can make the most of the advantage of the CF x film having a low dielectric constant, and that can prevent degradation of the properties of the CF x film due to CMP. The method of this invention includes (a) forming a CF x film, (b) forming a recess of a predetermined pattern on the CF x film, (c) providing a wiring layer so as to bury the recess and to cover the CF x film, and (d) removing the excess wiring layer on the CF x film other than in the recess by CMP (Chemical Mechanical Polishing), thereby exposing a surface of the CF x film, wherein (e) nitriding the surface of the CF x film is provided before or after (b). |