| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0ca49eb5621e3e7db268ec00ba17c96c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4eed87b6599fbf11024299bf8579f8c9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5601992acfea9484924241e370761dc5 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2031
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0421
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3054
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0035
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2009
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3063 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3202
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-34333
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02579
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y20-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-320275
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02554 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-042 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-872
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-343
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0352
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-16 |
| filingDate |
2012-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2014-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8f0e13e172f821f3ebe157f06fc24f4e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ea23e6e4dd1bcf3afef65aecbe39879f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_095a7a2b325546383489ad60077f5d25 |
| publicationDate |
2014-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8872156-B2 |
| titleOfInvention |
Group III nitride semiconductor light emitting device and method of fabricating group III nitride semiconductor light emitting device |
| abstract |
A group III nitride semiconductor light emitting device includes an n-type cladding layer and a p-type cladding layer on a primary surface of a substrate, the c-axes of which tilt relative to the normal axis of the primary surface of the substrate. The p-type cladding layer is doped with a p-type dopant providing an acceptor level, and the p-type cladding layer contains an n-type impurity providing a donor level. An active layer is disposed between the n-type cladding layer and the p-type cladding layer. The concentration of the p-type dopant is greater than that of the n-type impurity. The difference (E(BAND)−E(DAP)) between the energy E(BAND) of a band-edge emission peak value in the photoluminescence spectrum of the p-type cladding layer and the energy E(DAP) of a donor-acceptor pair emission peak value in the photoluminescence spectrum is not more than 0.42 electron volts. |
| priorityDate |
2011-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |