| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0b001a904fba41cfbe2f7632b13e3fc3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2fd2bfca55ce53ee912a4b67850f36c3 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-94
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01006
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01005
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-00013
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-13022
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-13099
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-0401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-19043
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-12105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-525
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-1147
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-0233
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-13
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-05
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-03
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01033
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01029
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-13024
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01022
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-13014
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01019
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-10253
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01013
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-014
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-131
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01078
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05008
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-3121
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05569
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-12042
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-02331 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-564
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5226
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-528
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53295
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04L24-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-94
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-296
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-3114
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-3171 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-525
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-31 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-488 |
| filingDate |
2013-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2014-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c7bcf660d7ea85fe9de7e43a9277867c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9064f0354b3dbf0e1031f517cfdc8b24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_986df73cf8f58cfe9d89d6e5c39e6a4d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b778368508c2a0ef4734c261a14e34ca |
| publicationDate |
2014-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8871627-B2 |
| titleOfInvention |
Semiconductor device having low dielectric insulating film and manufacturing method of the same |
| abstract |
A semiconductor device includes a semiconductor substrate on which a structure portion is provided except a peripheral portion thereof, and has a laminated structure including low dielectric films and wiring lines, the low dielectric films having a relative dielectric constant of 3.0 or lower and a glass transition temperature of 400° C. or higher. An insulating film is formed on the structure portion. A connection pad portion is arranged on the insulating film and connected to an uppermost wiring line of the laminated structure portion. A bump electrode is provided on the connection pad portion. A sealing film made of an organic resin is provided on a part of the insulating film which surrounds the bump electrode. Side surfaces of the laminated structure portion are covered with the insulating film and/or the sealing film. |
| priorityDate |
2007-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |