| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_242789508fcc9b52c84a82ac211a6774 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-80
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-826
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-028
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8833
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8836 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L49-02 |
| filingDate |
2012-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2014-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_45d2d1faf71bbf377d14e7be91389861
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_35cc038b8e44bbeaaafe15501319254b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3b6756a9fb0ce309bac4600180cccbc1 |
| publicationDate |
2014-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8871621-B2 |
| titleOfInvention |
Method of forming an asymmetric MIMCAP or a schottky device as a selector element for a cross-bar memory array |
| abstract |
MIMCAP devices are provided that can be suitable for memory device applications, such as current selector devices for cross point memory array. The MIMCAP devices can have lower thermal budget as compared to Schottky diodes and controllable lower barrier height and lower series resistance as compared to MIMCAP tunneling diodes. The MIMCAP diode can include a low defect dielectric layer, a high defect dielectric layer, sandwiched between two electrodes having different work function values. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10964779-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10263184-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11616197-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015270409-A1 |
| priorityDate |
2012-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |