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filingDate 2013-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2014-10-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_300ffd725b4336363add4eab1542aa68
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publicationDate 2014-10-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-8858816-B2
titleOfInvention Enhanced etch and deposition profile control using plasma sheath engineering
abstract A plasma processing tool is used to deposit material on a workpiece. For example, a method for conformal deposition of material is disclosed. In this embodiment, the plasma sheath shape is modified to allow material to impact the workpiece at a range of incident angles. By varying this range of incident angles over time, a variety of different features can be deposited onto. In another embodiment, a plasma processing tool is used to etch a workpiece. In this embodiment, the plasma sheath shape is altered to allow ions to impact the workpiece at a range of incident angles. By varying this range of incident angles over time, a variety of differently shaped features can be created.
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