Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_242cc8d15c771395b920cc7de452da6a |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02365 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02516 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-812 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02439 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02458 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-303 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-155 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02433 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-778 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02494 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02507 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0661 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-403 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-025 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-183 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B23-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-15 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 |
filingDate |
2013-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2014-10-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1ea06297585ddfef7d86138cd73a6914 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7eba4939a7287d995041213751c9df32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_10eb0b651fddc1e60fec307477f2f158 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_79463fc33dbb468e6d4453f02c4b2351 |
publicationDate |
2014-10-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-8853829-B2 |
titleOfInvention |
Epitaxial substrate for semiconductor device, method for manufacturing epitaxial substrate for semiconductor device, and semiconductor device |
abstract |
Provided is a crack-free epitaxial substrate having a small amount of dislocations in which a silicon substrate is used as a base substrate. An epitaxial substrate includes a substrate made of (111) single crystal silicon and a base layer group in which a plurality of base layers are laminated. Each of the plurality of base layers includes a first group-III nitride layer made of AlN and a second group-III nitride layer made of Al yy Ga zz N formed on the first group-III nitride layer. The first group-III nitride layer has many crystal defects. An interface between the first and second group-III nitride layers is a three-dimensional concavo-convex surface. In the base layer other than the base layer formed immediately above the base substrate, the first group-III nitride layer has a thickness of 50 nm or more and 100 nm or less and the second group-III nitride layer satisfies 0≦yy≦0.2. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10332975-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017200806-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9997397-B2 |
priorityDate |
2010-09-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |