| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2d1d336787e4d458c75ddb2e981da783
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5b7778dfcbb646e1892f6efe3d8c864c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38853c8ddfa8a347155ae6b74bc81943
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_813a7f722368b6fd5471ba0fe685d30c |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-68735
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45521
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-68728
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4585 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-687
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-458 |
| filingDate |
2006-09-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2014-10-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_47b8becdf97b2901f4d5b459fa573991
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8b50019bec9808daff77328629b885ee
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_33ed61d5d37062ed72d003082aaccc31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_844b390ca01dd05a9a0b97d01c7d0546 |
| publicationDate |
2014-10-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8852349-B2 |
| titleOfInvention |
Wafer processing hardware for epitaxial deposition with reduced auto-doping and backside defects |
| abstract |
According to one aspect of the invention, an apparatus for reducing auto-doping of the front side of a substrate and reducing defects on the backside of the substrate during an epitaxial deposition process for forming an epitaxial layer on the front side of the substrate comprising: a means for forming a wafer gap region between the backside of the substrate and a susceptor plate, having an adjustable thickness; a means for ventilating auto-dopants out of the wafer gap region with a flow of inert gas, while inhibiting or prohibiting the flow of inert gas over the front side of the substrate; and a means for flowing reactant gases over the surface of the front side of the substrate, while inhibiting or prohibiting the flow of reactant gases near the surface of the backside of the substrate. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015221730-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10032624-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022364261-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017098542-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11345998-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10916451-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019035646-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11018045-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015270155-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10808310-B2 |
| priorityDate |
2006-09-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |