patent/US-8841777-B2

http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8841777-B2

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filingDate	2010-01-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate	2014-09-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor	http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_86161505e043d190e6e87f618111fea2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c0e1752f4a4b54b773c7c422ccbfb857 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c89c61de30b03004b01ab2664acf8e67 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d590e2cc5e0303d0751b573a4ca37579
publicationDate	2014-09-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber	US-8841777-B2
titleOfInvention	Bonded structure employing metal semiconductor alloy bonding
abstract	Vertical stacks of a metal portion and a semiconductor portion formed on a first substrate are brought into physical contact with vertical stacks of a metal portion and a semiconductor portion formed on a second substrate. Alternately, vertical stacks of a metal portion and a semiconductor portion formed on a first substrate are brought into physical contact with metal portions formed on a second substrate. The assembly of the first and second substrates is subjected to an anneal at a temperature that induces formation of a metal semiconductor alloy derived from the semiconductor portions and the metal portions. The first substrate and the second substrate are bonded through metal semiconductor alloy portions that adhere to the first and second substrates.
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