| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9dba4c642ea22ddd135d2233f9b172e8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_553a466c07d79b3c10f69b47ced20e51
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9af9613d1757b0eb5ff12fd212b4aaf0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_43fcc09ac536b68aa0671877fef2fa83
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f4344dcc3de7ee5d87d734d04d1f1c6c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_178c404a9ab23db791f33502a8d76324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4bbf3a6b73121502c9bb255294743f50 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-207
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66462
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28264
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7787
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7786 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-207 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-51
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778 |
| filingDate |
2011-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2014-09-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5ec916b96b3268037e0a95429462b97c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e1759f1ee1480e6f10927a5fabb3bdd6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1e70ff5e52bf9e954931c624a3292879
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7d26639c7841eb3ed9b71d36c74f87a3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_afb7d84c6cc7233d443c824303afe805
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9d467238050d6b4c95a829dbd50fc013
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_568e1cda90c030f4cf346019cf6dcd3a |
| publicationDate |
2014-09-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8841703-B2 |
| titleOfInvention |
High electron mobility transistor and method of forming the same |
| abstract |
A semiconductor structure includes a first III-V compound layer. A second III-V compound layer is disposed on the first III-V compound layer and is different from the first III-V compound layer in composition. A carrier channel is located between the first III-V compound layer and the second III-V compound layer. A source feature and a drain feature are disposed on the second III-V compound layer. A gate electrode is disposed over the second III-V compound layer between the source feature and the drain feature. A fluorine region is embedded in the second III-V compound layer under the gate electrode. A gate dielectric layer is disposed over the second III-V compound layer. The gate dielectric layer has a fluorine segment on the fluorine region and under at least a portion of the gate electrode. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9224829-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10096550-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10224285-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014242761-A1 |
| priorityDate |
2011-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |