http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8841215-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7f8f66f52c72c1ad38830ff9eb455576 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d8213ccc00092f192fd16da72c418d80 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a59568f3c44db29a48ec88c2a57bbfe7 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02024 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-04 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09G1-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate | 2012-03-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2014-09-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5e95419e51091ba64de98a5397e93c3c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cf0b3fa964051f200fd4fc3a730b7701 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c0c37b20ca73428ddc9c79029401d38f |
| publicationDate | 2014-09-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-8841215-B2 |
| titleOfInvention | Polishing agent, compound semiconductor manufacturing method, and semiconductor device manufacturing method |
| abstract | Afforded are a polishing agent, and a compound semiconductor manufacturing method and semiconductor device manufacturing method utilizing the agent, whereby the surface quality of compound semiconductor substrates can be favorably maintained, and high polishing rates can be sustained as well. The polishing agent is a polishing agent for Ga α In (1-α) As β P (1-β) (0≦α≦1; 0≦β≦1) compound semiconductors, and includes an alkali metal carbonate, an alkali metal organic salt, a chlorine-based oxidizer, and an alkali metal phosphate, wherein the sum of the concentrations of the alkali metal carbonate and the alkali metal organic salt is between 0.01 mol/L and 0.02 mol/L, inclusive. The compound semiconductor manufacturing method comprises a step of preparing a Ga α In (1-α) As β P (1-β) (0≦α≦1; 0≦β≦1) compound semiconductor, and a step of polishing the face of the compound semiconductor utilizing an aforedescribed polishing agent. |
| priorityDate | 2010-05-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 83.