| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7ca1fb6f8bfd93d6c3d6389711fc9c8b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cec554b106915c17e9b8c8a6468bd021
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_391a22e8ed4237fdcbf9f2681aa69692
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_774ccda7eab15d3037b62842d7140cad |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02639
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02573
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66636
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7848
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02636 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate |
2011-02-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2014-09-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_89adb567f0ae4785bfcd76004ed4328e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6978cc6aba786fb0e1633587c0a7682e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bb7abaa2098753f0a950f9d159ed3bb9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_97229c4f956853c308c042120fcea85c |
| publicationDate |
2014-09-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8828850-B2 |
| titleOfInvention |
Reducing variation by using combination epitaxy growth |
| abstract |
A method for forming a semiconductor structure includes forming a gate stack over a semiconductor substrate in a wafer; forming a recess in the semiconductor substrate and adjacent the gate stack; and performing a selective epitaxial growth to grow a semiconductor material in the recess to form an epitaxy region. The step of performing the selective epitaxial growth includes performing a first growth stage with a first growth-to-etching (E/G) ratio of process gases used in the first growth stage; and performing a second growth stage with a second E/G ratio of process gases used in the second growth stage different from the first E/G ratio. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10229975-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10504997-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9425287-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10163727-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9773875-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9997616-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016027702-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9761693-B2 |
| priorityDate |
2010-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |