| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_75b7bd2d8847be019986f77e4370f8e3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f4b8639a57dae7458f8861661a0c0cf0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_dcf7ed4d5b2a9eb0335959172852f14f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d9eb863ad6ee293e34a74a7b3282f0ca
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b2e0da3622c718e9d8cfc2394d9fd5b3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_aeaf260a3ab6ea002b0da85ab55e6e86 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4236 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7788
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-778
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66462
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-155
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7789 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-15
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778 |
| filingDate |
2011-07-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2014-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4e4a88c59c31aa075910ef410a26796b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4040702f6917019ac8e5a8a40b615616
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2c3071a64d432c0413e66ebc62c3f9ee
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8eb58e7f22fee6d5da8cc0684c1947b0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3397dc0c7a972372d32bc666b10e6e88
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_46120a2a23f4ae66602c572065706ce5 |
| publicationDate |
2014-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8816398-B2 |
| titleOfInvention |
Semiconductor device and method for producing the same |
| abstract |
There is provided a vertical GaN-based semiconductor device in which the on-resistance can be decreased while the breakdown voltage characteristics are improved using a p-type GaN barrier layer. The semiconductor device includes a regrown layer 27 including a channel located on a wall surface of an opening 28 , a p-type barrier layer 6 whose end face is covered, a source layer 7 that is in contact with the p-type barrier layer, a gate electrode G located on the regrown layer, and a source electrode S located around the opening. In the semiconductor device, the source layer has a superlattice structure that is constituted by a stacked layer including a first layer (a layer) having a lattice constant smaller than that of the p-type barrier layer and a second layer (b layer) having a lattice constant larger than that of the first layer. |
| priorityDate |
2010-10-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |