http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8809959-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f56b5174f7d196258707ccf1d609796e |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66484 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823462 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-518 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-512 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823857 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 |
| filingDate | 2012-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2014-08-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9aace32eeef2fb057fc0ece68754c1ca http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_446fe8e224c1a1a400fc1fc8851273e3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_22128dbc49b71da8a81d4ba78a7030ee |
| publicationDate | 2014-08-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-8809959-B2 |
| titleOfInvention | Semiconductor device and a manufacturing method thereof |
| abstract | The performances of a semiconductor device are improved. The device includes a first MISFET in which hafnium is added to the gate electrode side of a first gate insulation film including silicon oxynitride, and a second MISFET in which hafnium is added to the gate electrode side of a second gate insulation film including silicon oxynitride. The hafnium concentration in the second gate insulation film of the second MISFET is set smaller than the hafnium concentration in the first gate insulation film of the first MISFET; and the nitrogen concentration in the second gate insulation film of the second MISFET is set smaller than the nitrogen concentration in the first gate insulation film of the first MISFET. As a result, the threshold voltage of the second MISFET is adjusted to be smaller than the threshold voltage of the first MISFET. |
| priorityDate | 2011-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 52.