http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8809909-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b2c3a24448c4aa18527fd4ada25d5f3b http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fe950d708c7cd3395969c85dcbe67c67 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7787 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66462 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-778 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0328 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-072 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-109 |
| filingDate | 2011-08-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2014-08-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_98acbb0c6ea32602b83ad5f25073b1a3 |
| publicationDate | 2014-08-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-8809909-B2 |
| titleOfInvention | High voltage III-nitride transistor |
| abstract | A high voltage durability III-nitride semiconductor device comprises a support substrate including a first silicon body, an insulator body over the first silicon body, and a second silicon body over the insulator body. The high voltage durability III-nitride semiconductor device further comprises a III-nitride semiconductor body characterized by a majority charge carrier conductivity type, formed over the second silicon body. The second silicon body has a conductivity type opposite the majority charge carrier conductivity type. In one embodiment, the high voltage durability III-nitride semiconductor device is a high electron mobility transistor (HEMT) comprising a support substrate including a <100> silicon layer, an insulator layer over the <100> silicon layer, and a P type conductivity <111> silicon layer over the insulator layer. The high voltage durability HEMT also comprises a III-nitride semiconductor body formed over the P type conductivity <111> silicon layer, the III-nitride semiconductor body forming a heterojunction of the HEMT. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014353723-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9281387-B2 |
| priorityDate | 2007-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.