| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76811
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76804
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76832
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-308 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-4763
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| filingDate |
2013-07-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2014-08-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8aba086bb4c35460ad7cf9a00aa3dada |
| publicationDate |
2014-08-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8809185-B1 |
| titleOfInvention |
Dry etching method for metallization pattern profiling |
| abstract |
A method for profiling a film stack includes receiving a film stack having an insulation layer, a dielectric hard mask layer, and a patterned metal hard mask layer. The pattern in the patterned metal hard mask layer is transferred to the dielectric hard mask layer using a first dry etching process. The pattern in the dielectric hard mask layer is then transferred to the insulation layer using a second dry etching process including one or more halogen-containing gases. The second etching process etches the insulation layer and removes a portion of the patterned metal hard mask layer, which exposes a corner of the underlying dielectric hard mask layer. Portions of the dielectric hard mask layer that overhang the insulation layer are removed using a third dry etching process including a process composition that is more selective to the dielectric hard mask layer relative to the insulation layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109427656-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11594419-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019067096-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11031279-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109427656-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10475700-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11244858-B2 |
| priorityDate |
2013-07-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |