| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1b7aa7dacafe7d9f519095d33f65df48
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_90066d22a0e3e9bcfcc6145136f02a70
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9c620b7b953c8fece79a2a525d3c441b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c5a65afd2c0d431385c1f67a0660a28e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_436fe5c6f7d3db016f122759cd5e80af |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3185
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31612
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28167
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28194
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28202
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-022 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate |
2012-04-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2014-08-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cb616806e2f8ca5622ffbcce011bd1ce
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7f97a43bc6c596a44c099dfe57b4c429
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7b985b6253c364cbd2fe45657626219e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d97a447915b94d1aab4a4bec916bc459 |
| publicationDate |
2014-08-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8802575-B2 |
| titleOfInvention |
Method for forming the gate insulator of a MOS transistor |
| abstract |
A method for forming the gate insulator of a MOS transistor, including the steps of: a) forming a thin silicon oxide layer at the surface of a semiconductor substrate; b) incorporating nitrogen atoms into the silicon oxide layer by plasma nitridation at a temperature lower than 200° C., to transform this layer into a silicon oxynitride layer; and c) coating the silicon oxynitride layer with a layer of a material of high dielectric constant, wherein steps b) and c) follow each other with no intermediate anneal step. |
| priorityDate |
2011-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |