| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1e0912b1b1bc671acf4f508711542ea6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_eb4d7617fc7fb114a6c1f8409256ca5f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_134a23822dc3fd65183d7fcd76b8f052
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be755b2c7baf8a733cb819d6e9ba2310
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c60cbeb32859b75d089103559c856e48 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02378
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02529
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B21-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B28-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-931
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B13-00 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02529
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01B1-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02378
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01B1-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B21-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-00 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B13-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B28-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B21-04 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B31-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B01J3-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B1-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B1-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 |
| filingDate |
2005-10-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2014-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8144e333639d110b2e3558a08db8ad5b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a5c612d5574bfb483248f964a470607a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5a4e4d76c7d56fcc6c4ef4caf8e076ca
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c26184735e5f10cb3114ccf6633e9ef6 |
| publicationDate |
2014-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8795624-B2 |
| titleOfInvention |
Monocrystalline silicon carbide ingot, monocrystalline silicon carbide wafer and method of manufacturing the same |
| abstract |
Provided is a monocrystalline silicon carbide ingot containing a dopant element, wherein a maximum concentration of the dopant element is less than 5×10 17 atoms/cm 3 and the maximum concentration is 50 times or less than that of a minimum concentration of the dopant element. Also provided is a monocrystalline silicon carbide wafer made by cutting and polishing the monocrystalline silicon carbide ingot, wherein a electric resistivity at room temperature of the wafer is 5×10 3 Ωcm or more. Further provided is a method for manufacturing the monocrystalline silicon carbide including growing the monocrystalline silicon carbide on a seed crystal from a sublimation material by a sublimation method. The sublimation material includes a solid material containing a dopant element, and the specific surface of the solid material containing the dopant element is 0.5 m 2 /g or less. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9732438-B2 |
| priorityDate |
2004-10-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |