| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_23526180c2191f4460ba71d2d670f19d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_27d08151fdb6b021c4b8680a625752c2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0e433c1625fc509a087c912b440da84b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_76ba102ea9c02b6633d64bf09c5b89a4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d2594021e60bebad245cfcb27ff2028f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_386fad47c887342f334e09bd5f33168f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-1051 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11502
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B53-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-045 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-322
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115 |
| filingDate |
2011-09-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2014-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9aae40830ae2f029bd9c94b37aff58ec
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8b779b2c523ab63994ba03c4986b138f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_566e5996bb2392e50eef07312fa83008
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_19303a2cde13c38a105d0d1ad9243b40 |
| publicationDate |
2014-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8778774-B2 |
| titleOfInvention |
Enhancement of properties of thin film ferroelectric materials |
| abstract |
Methods are provided for enhancing properties, including polarization, of thin-film ferroelectric materials in electronic devices. According to one embodiment, a process for enhancing properties of ferroelectric material in a device having completed wafer processing includes applying mechanical stress to the device, independently controlling the temperature of the device to cycle the temperature from room temperature to at or near the Curie temperature of the ferroelectric material and back to room temperature while the device is applied with the mechanical stress, and then removing the mechanical stress. Certain of the subject methods can be performed as part of a back end of line (BEOL) process, and may be performed during the testing phase at wafer or die level. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018374861-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016086960-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11495607-B2 |
| priorityDate |
2011-09-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |