| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_12c3776f53bc24de31ae07e6a669ad3d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6af9a57049d2d91c036d4f5ab49154cb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_71954365503d713f94c5b9b5597726cf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b10d5a278c0bca08897abcbc694f8424
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_514f2435908326f630f4748a011d0685 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-022
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66636
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7848 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823864
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823807
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823814
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6656
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823871 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-461
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 |
| filingDate |
2011-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2014-07-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fc782b02d04fa39bec275d97a150dc5c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5704e20af3e0d078cfabdad1fe639933
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_422664c3270567c9cdbbd112e5a40f9f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1c93f0f1b1c52c267d70c773988d7d7e |
| publicationDate |
2014-07-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8772843-B2 |
| titleOfInvention |
Oxide deposition by using a double liner approach for reducing pattern density dependence in sophisticated semiconductor devices |
| abstract |
A silicon dioxide material may be provided in sophisticated semiconductor devices in the form of a double liner including an undoped silicon dioxide material in combination with a high density plasma silicon dioxide, thereby providing reduced dependency on pattern density. In some illustrative embodiments, the silicon dioxide double liner may be used as a spacer material and as a hard mask material in process strategies for incorporating a strain-inducing semiconductor material. |
| priorityDate |
2010-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |