| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6af9a57049d2d91c036d4f5ab49154cb |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-1089
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76886
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5384
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-562
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02697
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76858
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76846
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76873
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53209 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-4763 |
| filingDate |
2013-02-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2014-07-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6fde74d46175fd25cea7c64c49835376
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_28effffbe290189767cbcf9e3e0b36b3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f40179dc78659f381d80efa5a27fb3f3 |
| publicationDate |
2014-07-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8772158-B2 |
| titleOfInvention |
Multi-layer barrier layer stacks for interconnect structures |
| abstract |
The present disclosure is generally directed to multi-layer barrier layer stacks for interconnect structures that may be used to reduce mechanical stress levels between the interconnect structure and a dielectric material layer in which the interconnect structure is formed. One illustrative method disclosed herein includes forming a recess in a dielectric layer of a substrate and forming an adhesion barrier layer including an alloy of tantalum and at least one transition metal other than tantalum to line the recess, wherein forming the adhesion barrier layer includes creating a first stress level across a first interface between the adhesion barrier layer and the dielectric layer. The method also includes forming a stress-reducing barrier layer including tantalum over the adhesion barrier layer, wherein the stress-reducing barrier layer reduces the first stress level to a second stress level less than the first stress level, and filling the recess with a fill layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9142509-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105280613-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109413847-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014327141-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105280613-B |
| priorityDate |
2012-07-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |