| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823425
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823864
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823468
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823814 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 |
| filingDate |
2013-09-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2014-07-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_52de0d49eb322d5c5a38920ace7977fb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_75c1b4d617b45830c5282ec94b6941cf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8a5c24aed98558f9a3fd25321c889216
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_63ca43f5a401d4b776be8555f3358475
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f59bc4487c8f6f2f733f3316d4e632df |
| publicationDate |
2014-07-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8772147-B2 |
| titleOfInvention |
Spacer structures of a semiconductor device |
| abstract |
A method of fabricating a semiconductor device includes forming a first set of gate electrodes over a substrate, adjacent gate electrodes of the first set of gate electrodes being separated by a first gap width, and having a first gate width. The method includes forming a second set of gate electrodes over the substrate, adjacent gate electrodes of the second set of gate electrodes being separated by a second gap width less than the first gap width, and having a second gate width greater than the first gate width. The method further includes forming a first set of spacer structures on sidewalls of the first and second sets of gate electrodes. The method further includes forming a second set of spacer structures abutting the first set of spacer structures and removing a subset of the second set of spacer structures over the sidewalls of the second set of gate electrodes. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9577051-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014299937-A1 |
| priorityDate |
2010-07-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |