Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0673 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7781 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-484 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-775 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66439 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L51-0558 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1606 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y30-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3081 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7624 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-05 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-30 |
filingDate |
2013-01-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2014-06-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4ef1921066dbe234ff7a889ca0997b67 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_24255475ee2858bef2f24326e1f4192a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f34bf450ffd70f5148b6f16dc1567f41 |
publicationDate |
2014-06-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-8759824-B2 |
titleOfInvention |
Semiconductor structure and circuit including ordered arrangement of graphene nanoribbons, and methods of forming same |
abstract |
A semiconductor structure including an ordered array of parallel graphene nanoribbons located on a surface of a semiconductor substrate is provided using a deterministically assembled parallel set of nanowires as an etch mask. The deterministically assembled parallel set of nanowires is formed across a gap present in a patterned graphene layer utilizing an electric field assisted assembly process. A semiconductor device, such as a field effect transistor, can be formed on the ordered array of parallel graphene nanoribbons. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11136666-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9859513-B2 |
priorityDate |
2011-01-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |