| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f236e6abf5df004107e470a43087f24f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8a4eb3d182631be98ea794db21f941fa
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b853c521eadf27d276e26825b970dfbe
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d71c4ea87087f843afb7bb9de2c2c0ac |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-08145
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-02371
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05666
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2225-06551
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01029
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-82101
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2225-06541
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2225-06513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-73217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-97
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-94
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-10253
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-80896
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-24145
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-05
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05558
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-0345 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L25-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-82
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-94
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-97
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L25-0657
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-80
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-03
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-24 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-40 |
| filingDate |
2011-01-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2014-06-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_591f65e3b162c228ebb715143c4de715
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_858af32827a9b0b54be660b13ab8a47d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_45c5efa23a9361160fd178ac89e94c8d |
| publicationDate |
2014-06-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8754507-B2 |
| titleOfInvention |
Forming through-silicon-vias for multi-wafer integrated circuits |
| abstract |
The present invention provides a method for forming a three-dimensional wafer stack having a single metallized stack via with a variable cross-sectional shape. The method uses at least first and silicon wafers. Each wafer has one or more integrated circuits formed thereon. One or more through-vias are formed in each silicon wafer followed by oxide formation on at least an upper and lower surface of the silicon wafer. The wafers are aligned such that each wafer through via is aligned with a corresponding through via in adjacent stacked wafers. Wafers are bonded to form a three-dimensional wafer stack having one or more stack vias formed from the alignment of individual wafer vias. Via metallization is performed by depositing a seed layer in each of the stack vias followed by copper electroplating to form a continuous and homogeneous metallization path through the three-dimensional wafer stack. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9881896-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10170447-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10269760-B2 |
| priorityDate |
2011-01-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |