| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05655
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05647
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05657
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-13111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-131
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11509
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05684
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11273
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05681
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05666
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-1146
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-05
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-13
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-056
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-0401 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11206
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-743
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5286
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5252
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-481 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-525
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-112 |
| filingDate |
2013-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2014-06-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_36f0363697c989b95d2adc7396622e39
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7f9396f2d64a9d4e98b058f736524591
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4a6bf07c042d8c6932f85e7ee7514147
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_642f841cc114d6883904598c6b8f4495
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fe8d2838a915e7b1a582eec12f0a6d2e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8bd87e962b2e5d42538c5b0d151f9ea9 |
| publicationDate |
2014-06-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8754499-B1 |
| titleOfInvention |
Semiconductor chip with power gating through silicon vias |
| abstract |
A semiconductor chip includes a semiconductor on insulator structure having a frontside and a backside. The chip includes a circuit in the semiconductor layer at the frontside. The circuit is isolated from a substrate. The chip includes a through silicon via (TSV) having a front-end, a back-end, and a lateral surface. The TSV is in the semiconductor layer and buried oxide layer and the front-end surface of the TSV is substantially parallel to the frontside of the semiconductor layer. An antifuse is deposited between the back-end of the TSV and the substrate. The antifuse insulates the TSV from the substrate. A ground layer is insulated from the semiconductor on insulator structure, and is coupled with the TSV and the circuit. The ground layer conducts a program voltage to the TSV to cause a portion the antifuse to migrate away from the TSV, thereby connecting the circuit to the ground. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10224410-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9252083-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10170578-B2 |
| priorityDate |
2013-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |