| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9ebbec1d263965139391504d9328f364
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_88fc7f9eb617072238851d46591a0c76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a42407c1f98a3435a70f61594413380
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3b0f8a3098b7214e87db6818fdbaffce |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66636 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-165
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02639
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66636
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7848
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823418
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823412 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-165
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 |
| filingDate |
2011-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2014-06-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f8128b13c8cd30e455660319ed270d14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_154a1134b89125eb5cfd263fd24594ea
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_71f7d086472ea076fc9ab98b6e276f0b |
| publicationDate |
2014-06-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8754448-B2 |
| titleOfInvention |
Semiconductor device having epitaxial layer |
| abstract |
A semiconductor device includes a semiconductor substrate and a plurality of transistors. The semiconductor substrate includes at least an iso region (namely an open region) and at least a dense region. The transistors are disposed in the iso region and the dense region respectively. Each transistor includes at least a source/drain region. The source/drain region includes a first epitaxial layer having a bottom thickness and a side thickness, and the bottom thickness is substantially larger than or equal to the side thickness. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11728429-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9673296-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11222978-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9190471-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015294865-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021257260-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10943790-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013178024-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10269577-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9496149-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019252201-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013270611-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9012277-B2 |
| priorityDate |
2011-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |