Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b051f9f7933c758e66f6ceda5c9fb2cc http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3bf9d56f53078a32eb80e854a59e20c4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2c21b725158fe49e94b28c7379cea3b7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_61a36beec4eb755938daf68920469213 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02214 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-401 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02348 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02203 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 |
filingDate |
2010-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2014-06-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_de47d5a7191f2c0842f2a9ba501fb0ce http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4f7cb1e77d2a23939e6ff9550e516f03 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ed0f428ba9a2f4edeac64fb5de32f8f5 |
publicationDate |
2014-06-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-8753986-B2 |
titleOfInvention |
Low k precursors providing superior integration attributes |
abstract |
A deposition for producing a porous organosilica glass film comprising: introducing into a vacuum chamber gaseous reagents including one precursor of an organosilane or an organosiloxane, and a porogen distinct from the precursor, wherein the porogen is aromatic in nature; applying energy to the gaseous reagents in the chamber to induce reaction of the gaseous reagents to deposit a film, containing the porogen; and removing substantially all of the organic material by UV radiation to provide the porous film with pores and a dielectric constant less than 2.6. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014242813-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9922818-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9018107-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10395920-B2 |
priorityDate |
2009-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |