| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d758ab0cd9df088eed552cead1123eb3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_94b20b6f022d96f3fcec94428bce9c67
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4c7041e69d917f73cd4955b969c8ccbe
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_39cb5d3683ce5a8229480f0198f1bdf1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_da5259c28879de986dba250c12f3df94 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-122
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1212
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1254 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 |
| filingDate |
2008-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2014-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5b06105f62f4a899ce83e9bf40855f76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_65fda4a7724011f2319e44dcc4c9169d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_94f64d34efc0292fbfcdef1e567f3357
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6ddd14ad26b4ef7bec37aa7f4bef1f02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_65524b51f97d4a3aa4a97c2a4397fd2a |
| publicationDate |
2014-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8736014-B2 |
| titleOfInvention |
High mechanical strength additives for porous ultra low-k material |
| abstract |
A semiconductor device and method for making such that provides improved mechanical strength is disclosed. The semiconductor device comprises a semiconductor substrate; an adhesion layer disposed over the semiconductor substrate; and a porous low-k film disposed over the semiconductor substrate, wherein the porous low-k film comprises a porogen and a composite bonding structure including at least one Si—O—Si bonding group and at least one bridging organic functional group. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9941157-B2 |
| priorityDate |
2008-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |