Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S977-938 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S977-842 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S977-742 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01H1-0094 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66666 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01C19-00 |
filingDate |
2012-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2014-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ae1bef5f136bcc22ef9b8ccd681ab804 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fb4026e48c1304593f725556438965bb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b7a9c5baddc9241eaaf9325927e729f4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4fb55f81c5c3f7100ea952571e64540e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fb9cb03a7b774ea7c83b6b7007aac407 |
publicationDate |
2014-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-8735947-B1 |
titleOfInvention |
Non-volatile graphene nanomechanical switch |
abstract |
Non-volatile switches and methods for making the same include a gate material formed in a recess of a substrate; a flexible conductive element disposed above the gate material, separated from the gate material by a gap, where the flexible conductive element is supported on at least two points across the gap, and where a voltage above a gate threshold voltage causes a deformation in the flexible conductive element such that the flexible conductive element comes into contact with a drain in the substrate, thereby closing a circuit between the drain and a source terminal. The gap separating the flexible conductive element and the gate material is sized to create a negative threshold voltage at the gate material for opening the circuit. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015349185-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018364192-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108473301-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015108872-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017084405-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109979768-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015180372-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9831803-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9812604-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9515580-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014124340-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10900924-B2 |
priorityDate |
2012-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |