| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4d72711e97d894c55af805c9de2053ab
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8c95aff1f29091f2ab73cb204371b072 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-066
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-231 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-231
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-066
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8828 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09G1-02 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-461
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-321
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00 |
| filingDate |
2008-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2014-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b9be446c07ca27e613d50c55c335e29b |
| publicationDate |
2014-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8735293-B2 |
| titleOfInvention |
Chemical mechanical polishing composition and methods relating thereto |
| abstract |
A method for chemical mechanical polishing of a substrate comprising a germanium-antimony-tellurium chalcogenide phase change alloy using a chemical mechanical polishing composition comprising water; 1 to 40 wt % colloidal silica abrasive particles having an average particle size of ≦50 nm; and 0 to 5 wt % quarternary ammonium compound; wherein the chemical mechanical polishing composition is oxidizer free and chelating agent free; and, wherein the chemical mechanical polishing composition has a pH >6 to 12. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014251950-A1 |
| priorityDate |
2008-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |