Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3c2e586213608acbc7fa2883fc8010c6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8292741de96a44319670508be1f78f1a http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d3fc9711989b2c07e13453d9e6a734d3 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8221 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823475 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 |
filingDate |
2013-01-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2014-05-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_998978cbaf3b7198d9efb55dee392044 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4ae3f430f94e6ff53c3e0094210186bf |
publicationDate |
2014-05-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-8722471-B2 |
titleOfInvention |
Method for forming a via contacting several levels of semiconductor layers |
abstract |
A method for forming a via connecting a first upper level layer to a second lower level layer, both layers being surrounded with an insulating material, the method including the steps of: a) forming an opening to reach an edge of the first layer, the opening laterally continuing beyond said edge; b) forming a layer of a protection material on said edge only; c) deepening said opening by selectively etching the insulating material to reach the second lower level layer; and d) filling the opening with at least one conductive contact material. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9761583-B2 |
priorityDate |
2012-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |