| abstract |
A method of fabrication of thin films for photovoltaic or electronic applications is provided. The method includes fabricating a nanocrystal precursor layer and selenizing the nanocrystal precursor layer in a selenium containing atmosphere. The nanocrystal precursor layer includes one of CuInS 2 , CuIn(S y ,Se 1-y ) 2 , CuGaS 2 , CuGa(S y , Se 1-y ) 2 , Cu(In x Ga 1-x )S 2 , and Cu(In x Ga 1-x )(S y , Se 1-y ) 2 nanoparticles and combinations thereof, wherein 0≦x≦1 and 0≦y≦1. |