http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8722174-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-24802 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-24612 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-24479 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-2457 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-24521 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2201-0149 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0657 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00031 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0002 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B32B3-00 |
| filingDate | 2012-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2014-05-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_823e7f76e3bd845af672674de250d7fe http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_469ba2cf6b86e5380ce8f877b794be89 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6e829ee7363ea80c6d2faffe3c6fb2d4 |
| publicationDate | 2014-05-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-8722174-B2 |
| titleOfInvention | Method of forming self-assembled patterns using block copolymers, and articles thereof |
| abstract | A method of forming a block copolymer pattern comprises providing a substrate comprising a topographic pre-pattern comprising a ridge surface separated by a height, h, greater than 0 nanometers from a trench surface; disposing a block copolymer comprising two or more block components on the topographic pre-pattern to form a layer having a thickness of more than 0 nanometers over the ridge surface and the trench surface; and annealing the layer to form a block copolymer pattern having a periodicity of the topographic pre-pattern, the block copolymer pattern comprising microdomains of self-assembled block copolymer disposed on the ridge surface and the trench surface, wherein the microdomains disposed on the ridge surface have a different orientation compared to the microdomains disposed on the trench surface. Also disclosed are semiconductor devices. |
| priorityDate | 2009-09-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.