| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_35a3b837d325df3a2b339da19354831c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9abf31a46dedbfe425e13d56cd286124
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_59c29bba1d483dd0e35a937d48ff2545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a6c4098119c76515dd4db1dd95dd9f66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_800d33d44bd909256bb66775227c9c30 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4966
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41775
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28123
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823456
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0207
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42356 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
2011-11-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2014-04-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ad2ccded20ff9bc4cac6b73cb5d7b437
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_74fd6cafd9a80dae0b163e7368ea99f1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ad7faab04d815d2c103d6d898e327dd6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c267ef1c33470048acb9b2b4e2acffe9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b76e420fa79f0eda7e70fbe04eda3761 |
| publicationDate |
2014-04-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8703595-B2 |
| titleOfInvention |
N/P boundary effect reduction for metal gate transistors |
| abstract |
The present disclosure provides a method of fabricating a semiconductor device. The method includes forming a plurality of dummy gates over a substrate. The dummy gates extend along a first axis. The method includes forming a masking layer over the dummy gates. The masking layer defines an elongate opening extending along a second axis different from the first axis. The opening exposes first portions of the dummy gates and protects second portions of the dummy gates. A tip portion of the opening has a width greater than a width of a non-tip portion of the opening. The masking layer is formed using an optical proximity correction (OPC) process. The method includes replacing the first portions of the dummy gates with a plurality of first metal gates. The method includes replacing the second portions of the dummy gates with a plurality of second metal gates different from the first metal gates. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10922472-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11742350-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11329042-B2 |
| priorityDate |
2011-11-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |