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filingDate 2011-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2014-04-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8ab068cd5a32e95bced8aa23aefe0be2
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publicationDate 2014-04-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-8697562-B2
titleOfInvention Metal contacts for molecular device junctions and surface-diffusion-mediated deposition
abstract Metal contact formation for molecular device junctions by surface-diffusion-mediated deposition (SDMD) is described. In an example, a method of fabricating a molecular device junction by surface-diffusion-mediated deposition (SDMD) includes forming a molecular layer above a first region of a substrate. A region of metal atoms is formed above a second region of the substrate proximate to, but separate from, the first region of the substrate. A metal contact is then formed by migrating metal atoms from the region of metal atoms onto the molecular layer.
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