| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9af9613d1757b0eb5ff12fd212b4aaf0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9dba4c642ea22ddd135d2233f9b172e8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_227ca349666847e614e650602b3e651d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4bbf3a6b73121502c9bb255294743f50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_553a466c07d79b3c10f69b47ced20e51
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1163f6b94762291d0ae879acb012cff2 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7784
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66462
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-778
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7787
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-338 |
| filingDate |
2011-09-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2014-04-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bd4696a5ccbc48155b6b641c020abf4a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_235a7be36a15aea630ba82e7a7fcef71
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_15fe940712fdf5587e278083e8cdd143
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9a61eb41602904d1cc81d15b1d8b41d1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_71092396e233e7bc347bef7f631f1062
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b9fa326b8702dceb0f96d601366ccc5c |
| publicationDate |
2014-04-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8697505-B2 |
| titleOfInvention |
Method of forming a semiconductor structure |
| abstract |
A semiconductor structure is disclosed. The semiconductor structure includes a first layer. A second layer is disposed on the first layer and different from the first layer in composition. An interface is between the first layer and the second layer. A third layer is disposed on the second layer. A gate is disposed on the third layer. A source feature and a drain feature are disposed on opposite sides of the gate. Each of the source feature and the drain feature includes a corresponding metal feature at least partially embedded in the second and the third layer. A corresponding intermetallic compound underlies each metal feature. Each intermetallic compound contacts a carrier channel located at the interface. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9263565-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9142658-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014091365-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8946012-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014187002-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9570598-B2 |
| priorityDate |
2011-09-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |