http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8680580-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_58df4c8eccf828ccf9ff4e608419d971 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f56b5174f7d196258707ccf1d609796e |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7787 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66462 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0256 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-15 |
| filingDate | 2008-11-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2014-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_42d24435d56577bfdcf0a38f585633f7 |
| publicationDate | 2014-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-8680580-B2 |
| titleOfInvention | Field effect transistor and process for manufacturing same |
| abstract | A field effect transistor includes: a channel layer 103 containing GaN or InGaN; a first electron-supplying layer 104 disposed over the channel layer 103 and containing In x Al y Ga 1-x-y N (0≦x<1, 0<y<1, 0<x+y<1); a first etch stop layer 105 disposed over the first electron-supplying layer 104 and containing indium aluminum nitride (InAlN); and a second electron-supplying layer 106 provided over the first etch stop layer 105 and containing In a Al b Ga 1-a-b N (0≦a<1, 0<b<1, 0<a+b<1). A first recess 111 , which extends through the second electron-supplying layer 106 and the first etch stop layer 105 and having a bottom surface constituted of a section of the first electron-supplying layer 104 , is provided in the second electron-supplying layer 106 and the first etch stop layer 105 . A gate electrode 109 covers the bottom surface of the first recess 111 and is disposed in the first recess 111 . The second electron-supplying layer is provided so as to overlap with regions of an interface between the first electron-supplying layer 104 and the channel layer 106 except a region thereof under the bottom surface of the first recess 111 covering the gate electrode 109. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011241020-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10074739-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10811501-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9966519-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11362205-B2 |
| priorityDate | 2007-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 42.