| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a27743239730ee6c0d83114412028ba3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_adef56e25869e75e3cbc9cd236678870
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f9640a0c6f6a8fa489c659bb2530f8e7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ebca25e4f737729fb927875476e58a9f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e978eaed6e9951611d77c9f85eaa5b1b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f5b1725cd67526c0738861e8e31b9072 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3406
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2004 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y20-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-34333 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 |
| filingDate |
2010-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2014-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_58d6feeeb07bb78061a008e3bfa53ac5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_836a0d1650c368e572b6b129cfcf56ec
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d952b64f6b7620b7b2c14d047f2383f7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f509eaf4f1bd569aab7546132ea4c02e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5b526e232b48486c54fb8ae6cf0adc65 |
| publicationDate |
2014-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8679876-B2 |
| titleOfInvention |
Laser diode and method for fabricating same |
| abstract |
A laser diode and method for fabricating same, wherein the laser diode generally comprises an InGaN compliance layer on a GaN n-type contact layer and an AlGaN/GaN n-type strained super lattice (SLS) on the compliance layer. An n-type GaN separate confinement heterostructure (SCH) is on said n-type SLS and an InGaN multiple quantum well (MQW) active region is on the n-type SCH. A GaN p-type SCH on the MQW active region, an AlGaN/GaN p-type SLS is on the p-type SCH, and a p-type GaN contact layer is on the p-type SLS. The compliance layer has an In percentage that reduces strain between the n-type contact layer and the n-type SLS compared to a laser diode without the compliance layer. Accordingly, the n-type SLS can be grown with an increased Al percentage to increase the index of refraction. This along with other features allows for reduced threshold current and voltage operation. |
| priorityDate |
2006-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |