| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_035985fd3f0f5a0674271068f8678dc5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_dade997fc2b05eec66fb3c2cf11a23a6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6900162c0a64e321929e285aef793d73
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_560f738c470c40912d0d1f9025cd85d8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2df86751083be8491ccad7cd091d190e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S2301-173
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-49107
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-32341
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-181
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-45144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02631
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02579
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48257
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S2304-04 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02458
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0237
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-183
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-022
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-0617
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02658
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-403 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-323
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-343 |
| filingDate |
2009-06-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2014-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2f41f311c6c871e2f0607f944d4d1fd2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_89e69b5565f220825cc43e0e7ca26249
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c81d06ff683b7c47fc11dcdc543f1486
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a294351591799b364b344173c6750253 |
| publicationDate |
2014-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8669129-B2 |
| titleOfInvention |
Method for producing group III nitride semiconductor light-emitting device, group III nitride semiconductor light-emitting device, and lamp |
| abstract |
One object of the present invention is to provide a method for producing a group III nitride semiconductor light-emitting device which has excellent productivity and produce a group III nitride semiconductor light-emitting device and a lamp, a method for producing a group III nitride semiconductor light-emitting device, in which a buffer layer ( 12 ) made of a group III nitride is laminated on a substrate ( 11 ), an n-type semiconductor layer ( 14 ) comprising a base layer ( 14 a ), a light-emitting layer ( 15 ), and a p-type semiconductor layer ( 16 ) are laminated on the buffer layer ( 12 ) in this order, comprising: a pretreatment step in which the substrate ( 11 ) is treated with plasma; a buffer layer formation step in which the buffer layer ( 12 ) having a composition represented by Al x Ga 1-x N (0≦x<1) is formed on the pretreated substrate ( 11 ) by activating with plasma and reacting at least a metal gallium raw material and a gas containing a group V element; and a base layer formation step in which the base layer ( 14 a ) is formed on the buffer layer ( 12 ). |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015325741-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2019007899-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9786859-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11508878-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9601663-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016064682-A1 |
| priorityDate |
2008-06-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |