Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5b038693e41627920d335983514ec355 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_397bac29714c6213e232274642d0e19b http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-35 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3441 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32623 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32651 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-35 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32642 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32082 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25B13-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B05C11-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25B9-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25B11-00 |
filingDate |
2012-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2014-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1824a6d7e0317740910b94da4720aee2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6ff3bb6d2f1668c8ba5f3b7120804901 |
publicationDate |
2014-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-8668815-B2 |
titleOfInvention |
Process kit for RF physical vapor deposition |
abstract |
Embodiments of the invention generally relate to a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a kit. More specifically, embodiments described herein relate to a process kit including a cover ring, a shield, and an isolator for use in a physical deposition chamber. The components of the process kit work alone and in combination to significantly reduce particle generation and stray plasmas. In comparison with existing multiple part shields, which provide an extended RF return path contributing to RF harmonics causing stray plasma outside the process cavity, the components of the process kit reduce the RF return path thus providing improved plasma containment in the interior processing region. |
priorityDate |
2008-05-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |