Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_95f786e282e1a7c3610efcf6847ac875 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6bc017828b0ec323b030da5569a63dcc http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d4fe0d804f6708485502a1dc652cb800 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_14ba71eccbb5f65a22b78f39b3c6ffc3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4c1ebde899e264b99b47853d32a647b9 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4941 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4933 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42368 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4238 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4236 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66734 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4916 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7397 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1037 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7813 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-407 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-405 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66348 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4925 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 |
filingDate |
2009-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2014-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_de1c046cef6ba01b7833b39e5d30708e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ff1534617ea07c8759654adc0c16cc39 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_31a07ea04e29bd5ef720755d4ff6ab62 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cc0703fb82a403b2ee2dc163e752b3e1 |
publicationDate |
2014-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-8664713-B2 |
titleOfInvention |
Integrated power device on a semiconductor substrate having an improved trench gate structure |
abstract |
A power device integrated on a semiconductor substrate and having a plurality of conductive bridges within a trench gate structure. In an embodiment, a semiconductor substrate includes a trench having sidewalls and a bottom, the walls and bottom are covered with a first insulating coating layer which then also includes a conductive gate structure. An embodiment provides the formation of the conductive gate structure with covering at least the sidewalls with a second conductive coating layer of a first conductive material. This results in a conductive central region of a second conductive material having a different resistivity than the first conductive material forming a plurality of conductive bridges between said second conductive coating layer and said conductive central region. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9520468-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9972496-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014138739-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9536743-B2 |
priorityDate |
2008-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |