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filingDate 2009-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2014-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2014-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-8664713-B2
titleOfInvention Integrated power device on a semiconductor substrate having an improved trench gate structure
abstract A power device integrated on a semiconductor substrate and having a plurality of conductive bridges within a trench gate structure. In an embodiment, a semiconductor substrate includes a trench having sidewalls and a bottom, the walls and bottom are covered with a first insulating coating layer which then also includes a conductive gate structure. An embodiment provides the formation of the conductive gate structure with covering at least the sidewalls with a second conductive coating layer of a first conductive material. This results in a conductive central region of a second conductive material having a different resistivity than the first conductive material forming a plurality of conductive bridges between said second conductive coating layer and said conductive central region.
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