| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ba1cce1030ed288aa4a101cf9c84ea0a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cc1dc9033eb84200efbfd6da6d1fc654
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8f22a66ef8719bb312739e66798204fb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_51d028c578ae85cb937b5b34a5129fbc |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45525
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53257
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28568
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28562
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76814
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-305
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53266
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41791 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-772 |
| filingDate |
2011-03-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2014-02-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_741c8c75e61f48529e66f92860524684
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_26651832ef6f76df267ba219e927a9f6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3166167fe3623ed19f350d3a4ea4e230 |
| publicationDate |
2014-02-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8659058-B2 |
| titleOfInvention |
Methods of forming nickel sulphide film on a semiconductor device |
| abstract |
Embodiments of the present invention describe a method of forming nickel sulfide layer on a semiconductor device. A nickel sulfide layer is formed on a substrate by alternatingly exposing the substrate to a nickel-containing precursor and a sulfur-containing precursor. |
| priorityDate |
2008-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |