http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8659001-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cc1136881e02dfe6141c7b6b9bf7d3e3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cb5746eb832dced6146d31f543e23b29 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_95ef563390a55ed46e16ee22afc87121 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2803ed951af0ab869e71420a7076ed49 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fdad00677b9268c26e005a9e03a7b9dd |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-021 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-821 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-80 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8833 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L47-00 |
| filingDate | 2011-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2014-02-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a1a1eb6b3aa40fa2891441b888e025f5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3794f1a518d00118372afc77618f0ca0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5f354f63ee5fa475cd86f1dfcfd00eea |
| publicationDate | 2014-02-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-8659001-B2 |
| titleOfInvention | Defect gradient to boost nonvolatile memory performance |
| abstract | Embodiments of the present invention generally relate to a resistive switching nonvolatile memory element that is formed in a resistive switching memory device that may be used in a memory array to store digital data. The memory element is generally constructed as a metal-insulator-metal stack. The resistive switching portion of the memory element includes a getter portion and/or a defect portion. In general, the getter portion is an area of the memory element that is used to help form, during the resistive switching memory device's fabrication process, a region of the resistive switching layer that has a greater number of vacancies or defects as compared to the remainder of resistive switching layer. The defect portion is an area of the memory element that has a greater number of vacancies or defects as compared to the remainder of the resistive switching layer, and is formed during the resistive switching memory device's fabrication process. The addition of the getter or defect portions in a formed memory device generally improves the reliability of the resistive switching memory device, improves the switching characteristics of the formed memory device and can eliminate or reduce the need for the time consuming additional post fabrication “burn-in” or pre-programming steps. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019181337-A1 |
| priorityDate | 2011-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 146.