| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_679f87544ce2acdd938693b4b66be455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2394ffa8de7a933e230b7d2015f41a6c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_82cd4faf8cd519153b899942204a3465 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-094 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0332
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0043
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate |
2011-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2014-02-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_741322490308fe34428e278c8237f600
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_47f18bb9f147af4ab053cbf5d19ebc14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_72e4bfbe610a9483f3d1e92a8e5eb4aa |
| publicationDate |
2014-02-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8658050-B2 |
| titleOfInvention |
Method to transfer lithographic patterns into inorganic substrates |
| abstract |
Techniques for minimizing or eliminating pattern deformation during lithographic pattern transfer to inorganic substrates are provided. In one aspect, a method for pattern transfer into an inorganic substrate is provided. The method includes the following steps. The inorganic substrate is provided. An organic planarizing layer is spin-coated on the inorganic substrate. The organic planarizing layer is baked. A hardmask is deposited onto the organic planarizing layer. A photoresist layer is spin-coated onto the hardmask. The photoresist layer is patterned. The hardmask is etched through the patterned photoresist layer using reactive ion etching (RIE). The organic planarizing layer is etched through the etched hardmask using RIE. A high-temperature anneal is performed in the absence of oxygen. The inorganic substrate is etched through the etched organic planarizing layer using reactive ion etching. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10597495-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10710071-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018203355-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10032633-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10082736-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9993750-B2 |
| priorityDate |
2011-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |