Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c0e3687553467f6b262e5c974ef315c4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_58254291b3d6e38b46eb0046b3358022 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42384 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K59-122 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K59-1201 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1259 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K59-1201 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-81 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-844 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-52 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J1-62 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-32 |
filingDate |
2011-02-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2014-02-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_db361bb9dfee453a48b6a81afd0f1083 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a7dc8f4b7f77463972aa3df87e8c15e9 |
publicationDate |
2014-02-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-8651911-B2 |
titleOfInvention |
Light emitting apparatus and method of manufacturing the same |
abstract |
A light-emitting apparatus of the present invention includes: a first electrode formed on an insulating surface; a first insulating layer covering an end portion of the first electrode and having a tapered edge; a second insulating layer formed on the first electrode and the first insulating layer and formed of one kind or a plurality of kinds selected from the group consisting of silicon oxide, silicon nitride, and silicon oxynitride; an organic compound layer formed on the second insulating layer; and a second electrode formed on the organic compound layer. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11744120-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021376023-A1 |
priorityDate |
2001-03-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |