| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_81c688c4ca6577b50701297b0bb5e1ce
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cea8dbe61b43fd71e0c4025d95ea862d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ddf72a2d6bd1db847c7ed18ba8921757
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7fc05298fa7d7c1907cc4f45950d03f4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_035f10b8d375a48bf90e165325032be0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_37a1f702745d117f36c530f1e5b12455 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02529
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66181
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-0387
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76229
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-743
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0649
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-91
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1203 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-70 |
| filingDate |
2010-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2014-02-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_066a9dbe3189e79ed5c305b6092c7892
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_01b36bc3546a318695db4f231feeb0e9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_469d76feda7cdb390863bf6401f057da
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8b541d921b85d30c78e0e29e0b53880f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bf911a4c2131ebd1ba2697dfc5737847
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b4d8ed3cf7d3436c55abe4441d05735d |
| publicationDate |
2014-02-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8647945-B2 |
| titleOfInvention |
Method of forming substrate contact for semiconductor on insulator (SOI) substrate |
| abstract |
A semiconductor structure is provided that includes a material stack including an epitaxially grown semiconductor layer on a base semiconductor layer, a dielectric layer on the epitaxially grown semiconductor layer, and an upper semiconductor layer present on the dielectric layer. A capacitor is present extending from the upper semiconductor layer through the dielectric layer into contact with the epitaxially grown semiconductor layer. The capacitor includes a node dielectric present on the sidewalls of the trench and an upper electrode filling at least a portion of the trench. A substrate contact is present in a contact trench extending from the upper semiconductor layer through the dielectric layer and the epitaxially semiconductor layer to a doped region of the base semiconductor layer. A substrate contact is also provided that contacts the base semiconductor layer through the sidewall of a trench. Methods for forming the above-described structures are also provided. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9187320-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014342557-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9490223-B2 |
| priorityDate |
2010-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |