| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5cb1b446bf49e54ded7a55c9be47298a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-541
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02422
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-5866
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02568
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02614
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0322
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02491 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B05D5-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-24 |
| filingDate |
2013-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2014-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_efae42ab5508de2825f5dec8074eb90d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d4a5a41f129bcff1d837befcd3b0ad1d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e4e8210f836205d5a7f0ca33f643420c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a87a1d5e6783a31d7d2b30b6a3be0401 |
| publicationDate |
2014-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8632851-B1 |
| titleOfInvention |
Method of forming an I-II-VI2 compound semiconductor thin film of chalcopyrite structure |
| abstract |
A method of forming an compound semiconductor thin film of chalcopyrite structure includes the steps of heating up elemental VI powder in a first chamber to produce VI vapor flux. The VI vapor flow is introduced into a second chamber and an Argon plasma is utilized to crack large molecular VI fractions to generate small VI species. The small molecule VI species are homogeneously deposited on the metallic I-III precursor layers and the precursor film is sealed into a graphite box and transferred to an annealing chamber to create an absorber layer with a large grain size and good crystalline structure. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9947807-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015221785-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018127875-A1 |
| priorityDate |
2013-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |