| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3f4e2b777b1453b4137c169269f40e87
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cea8dbe61b43fd71e0c4025d95ea862d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3efae1572b54c08ba0eefac6438d740a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_83642b0dba9a7d4644d28649a9612767 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-13 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 |
| filingDate |
2012-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2014-01-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d414602f40c52631a96a0e0f7f344ca0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c2695a803612b169f4a5370f41188827
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f98a92b5300299764075e747e6078b62
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_56b1e3229ab622af388a818d3213ad67 |
| publicationDate |
2014-01-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8629504-B2 |
| titleOfInvention |
Extremely thin semiconductor-on-insulator (ETSOI) integrated circuit with on-chip resistors and method of forming the same |
| abstract |
An electrical device is provided that in one embodiment includes a semiconductor-on-insulator (SOI) substrate having a semiconductor layer with a thickness of less than 10 nm. A semiconductor device having a raised source region and a raised drain region of a single crystal semiconductor material of a first conductivity is present on a first surface of the semiconductor layer. A resistor composed of the single crystal semiconductor material of the first conductivity is present on a second surface of the semiconductor layer. A method of forming the aforementioned electrical device is also provided. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017358610-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10090332-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9947755-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10128343-B2 |
| priorityDate |
2010-01-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |