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publicationDate 2014-01-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-8629011-B2
titleOfInvention Epitaxial silicon CMOS-MEMS microphones and method for manufacturing
abstract A method of manufacturing a microphone using epitaxially grown silicon. A monolithic wafer structure is provided. A wafer surface of the structure includes poly-crystalline silicon in a first horizontal region and mono-crystalline silicon in a second horizontal region surrounding a perimeter of the first horizontal region. A hybrid silicon layer is epitaxially deposited on the wafer surface. Portions of the hybrid silicon layer that contact the poly-crystalline silicon use the poly-crystalline silicon as a seed material and portions that contact the mono-crystalline silicon use the mono-crystalline silicon as a seed material. As such, the hybrid silicon layer includes both mono-crystalline silicon and poly-crystalline silicon in the same layer of the same wafer structure. A CMOS/membrane layer is then deposited on top of the hybrid silicon layer.
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